| CPC H10N 70/828 (2023.02) [H10N 70/021 (2023.02); H10N 70/063 (2023.02); H10N 70/231 (2023.02); H10N 70/24 (2023.02); H10N 70/826 (2023.02)] | 18 Claims |

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1. A memory device, comprising:
a first planar electrode;
a second planar electrode;
a switching element arranged between the first planar electrode and the second planar electrode, wherein a first side of the switching element is arranged nearer the first planar electrode and a second side of the switching element is arranged nearer the second planar electrode,
wherein a width or diameter of the switching element at the first side is greater than a width or diameter of the switching element at the second side, wherein the switching element is configured to provide a conductive filament formation region; and
a component arranged between the second side of the switching element and the second planar electrode, wherein a first side of the component is arranged nearer the first planar electrode and a second side of the component is arranged nearer the second planar electrode, wherein the component is conductive and in electrical communication with the second planar electrode wherein a width or diameter of the component at the first side of the component is greater than a width or diameter of the component at the second side of the component,
wherein the component comprises a nanopillar, wherein the nanopillar includes a pillar shaped body at the first side of the component in contact with the switching element, and a tapered pointy end at the second side of the component in contact with the second planar electrode, and the width or diameter of the component at the first side of the component is substantially the same as the width or diameter of the switching element at the second side of the switching element, wherein the first side of the component is in contact with the second side of the switching element.
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