US 12,284,923 B2
Three terminal neuromorphic synaptic device and method for manufacturing the same
Jiyong Woo, Daegu (KR)
Assigned to Kyungpook National University Industry-Academic Cooperation Foundation, Daegu (KR)
Filed by Kyungpook National University Industry-Academic Cooperation Foundation, Daegu (KR)
Filed on Jan. 21, 2022, as Appl. No. 17/580,640.
Claims priority of application No. 10-2021-0029314 (KR), filed on Mar. 5, 2021; and application No. 10-2021-0117132 (KR), filed on Sep. 2, 2021.
Prior Publication US 2022/0285615 A1, Sep. 8, 2022
Int. Cl. H10N 70/20 (2023.01); G06N 3/065 (2023.01); H10N 70/00 (2023.01)
CPC H10N 70/253 (2023.02) [G06N 3/065 (2023.01); H10N 70/011 (2023.02); H10N 70/245 (2023.02); H10N 70/8416 (2023.02); H10N 70/8616 (2023.02); H10N 70/8833 (2023.02)] 10 Claims
OG exemplary drawing
 
1. A three terminal neuromorphic synaptic device comprising:
a substrate;
a source electrode and a drain electrode provided on the substrate while being spaced apart from each other;
a channel region provided to be electrically connected between the source electrode and the drain electrode, on the substrate;
an ion transfer layer provided on the channel region;
a gate electrode provided on the ion transfer layer;
a voltage application unit to apply a gate voltage to the gate electrode;
a metal liner layer interposed between the ion transfer layer and the gate electrode, the metal liner layer including at least one of titanium nitride (TiN), titanium tungsten (TiW), and titanium (Ti); and
a second heat blocking layer provided on a side surface of the ion transfer layer, a side surface of the gate electrode, and an upper surface of the gate electrode, the second heat blocking layer including a material having a thermal conductivity and an ion conductivity lower than a thermal conductivity and an ion conductivity of the ion transfer layer,
wherein the ion transfer layer includes an electrolyte material to transfer an active ion of the gate electrode between the gate electrode and the channel region, in response to the gate voltage applied to the gate electrode,
wherein the voltage application unit adjusts a resistance and a conductance of the channel region by changing an amount of active ions accumulated in the channel region, depending on the number of times that the gate voltage is applied,
wherein the ion transfer layer includes a first ion transfer layer and a second ion transfer layer,
wherein the gate electrode includes a first copper (Cu) electrode, a second Cu electrode, and a metal electrode including a metal material other than Cu,
wherein the first ion transfer layer is provided on the channel region, the first Cu electrode is provided on the first ion transfer layer, the second ion transfer layer is provided on the first Cu electrode, the second Cu electrode is provided on the second ion transfer layer, and the non-Cu metal electrode is provided on the second Cu electrode.