US 12,284,918 B2
Thermoelectric conversion element, thermoelectric conversion module, and method of producing thermoelectric conversion element
Kotaro Hirose, Osaka (JP); Masahiro Adachi, Osaka (JP); and Tsunehiro Takeuchi, Nagoya (JP)
Assigned to SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka. (JP); and TOYOTA SCHOOL FOUNDATION, Nagoya (JP)
Appl. No. 18/574,080
Filed by Sumitomo Electric Industries, Ltd., Osaka (JP); and Toyota School Foundation, Nagoya (JP)
PCT Filed Feb. 25, 2022, PCT No. PCT/JP2022/007966
§ 371(c)(1), (2) Date Dec. 26, 2023,
PCT Pub. No. WO2023/276266, PCT Pub. Date Jan. 5, 2023.
Claims priority of application No. 2021-109138 (JP), filed on Jun. 30, 2021.
Prior Publication US 2024/0334832 A1, Oct. 3, 2024
Int. Cl. H10N 10/817 (2023.01); H10N 10/01 (2023.01); H10N 10/82 (2023.01); H10N 10/851 (2023.01)
CPC H10N 10/817 (2023.02) [H10N 10/01 (2023.02); H10N 10/82 (2023.02); H10N 10/8556 (2023.02)] 17 Claims
OG exemplary drawing
 
1. A thermoelectric conversion element comprising:
a first electrode;
a thermoelectric conversion material portion composed of SiGe including an amorphous phase and a crystal phase and configured to convert heat into electricity;
an intermediate layer arranged on the thermoelectric conversion material portion;
a conductive bonding material arranged in between the intermediate layer and the first electrode to bond the first electrode to the intermediate layer; and
a second electrode arranged apart from the first electrode and connected to the thermoelectric conversion material portion,
wherein the intermediate layer includes
a first layer arranged in contact with the thermoelectric conversion material portion, the first layer containing a dopant, and
a second layer arranged on the first layer and in contact with the bonding material, and configured to suppress diffusion of elements,
the intermediate layer having an interface resistivity of not less than 0.0001 mΩcm2 and not more than 0.5 mΩcm2.