US 12,284,857 B2
Imaging element, stacked imaging element and solid-state imaging device, and inorganic oxide semiconductor material
Toshiki Moriwaki, Tokyo (JP); Hiroshi Nakano, Tokyo (JP); and Yoichiro Iino, Tokyo (JP)
Assigned to SONY GROUP CORPORATION, Tokyo (JP)
Appl. No. 17/611,980
Filed by SONY GROUP CORPORATION, Tokyo (JP)
PCT Filed Apr. 30, 2020, PCT No. PCT/JP2020/018224
§ 371(c)(1), (2) Date Nov. 17, 2021,
PCT Pub. No. WO2020/241168, PCT Pub. Date Dec. 3, 2020.
Claims priority of application No. 2019-097457 (JP), filed on May 24, 2019.
Prior Publication US 2022/0255027 A1, Aug. 11, 2022
Int. Cl. H10K 30/10 (2023.01); H01L 29/24 (2006.01); H10K 39/32 (2023.01)
CPC H10K 30/10 (2023.02) [H01L 29/24 (2013.01); H10K 39/32 (2023.02)] 15 Claims
OG exemplary drawing
 
1. An imaging element, comprising:
a photoelectric conversion section including:
a first electrode;
a second electrode;
a photoelectric conversion layer including an organic material, wherein the photoelectric conversion layer is between the first electrode and the second electrode; and
an inorganic oxide semiconductor material layer between the first electrode and the photoelectric conversion layer, wherein
the inorganic oxide semiconductor material layer includes an inorganic oxide semiconductor material, and
when a composition of the inorganic oxide semiconductor material is represented by MaNbSncO (where M denotes an aluminum atom, and N denotes a gallium atom or a zinc atom, or a gallium atom and a zinc atom),
a+b+c=1.00,
0.01≤a≤0.04, and
b<c are satisfied.