| CPC H10H 20/8513 (2025.01) [H10H 20/013 (2025.01); H10H 20/811 (2025.01); H10H 20/01 (2025.01); H10H 20/0361 (2025.01)] | 14 Claims |

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1. A semiconductor component having a semiconductor chip and a radiation conversion element, which is arranged on the semiconductor chip, wherein
the semiconductor chip comprises an active region intended to generate primary radiation with a peak wavelength;
the radiation conversion element comprises a monocrystalline quantum structure, positioned directly on a substrate of the semiconductor chip;
the quantum structure comprises a multiplicity of quantum layers, which are separated from one another by barrier layers and the quantum structure comprises at least one material from the group of the following material systems: Gax In1-x Asy P1-y, Inx Ga1-x Asy Sb1-y, Inx Ga1-x As, Inx Ga1-x Py Sb1-y, Inx Al1-x Py Sb1-y, where x and y are respectively selected so that a lattice constant of the material corresponds to that of InP;
the peak wavelength of the primary radiation lies in the infrared spectral range; and
the quantum structure converts the primary radiation at least partially into secondary radiation, an emission wavelength of an emission maximum of the secondary radiation being greater than the peak wavelength; wherein
the radiation conversion element only partially covers at most 80% the active region.
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