US 12,284,847 B2
Optoelectronic component and method for manufacturing an optoelectronic component
Ivar Tangring, Regensburg (DE)
Assigned to OSRAM Opto Semiconductors GmbH, Regensburg (DE)
Appl. No. 17/633,051
Filed by OSRAM Opto Semiconductors GmbH, Regensburg (DE)
PCT Filed Sep. 3, 2020, PCT No. PCT/EP2020/074593
§ 371(c)(1), (2) Date Feb. 4, 2022,
PCT Pub. No. WO2021/043901, PCT Pub. Date Mar. 11, 2021.
Claims priority of application No. 102019123886.2 (DE), filed on Sep. 5, 2019.
Prior Publication US 2022/0271202 A1, Aug. 25, 2022
Int. Cl. H10H 20/85 (2025.01); H10H 20/01 (2025.01); H10H 20/851 (2025.01); H10H 20/853 (2025.01); H10H 20/857 (2025.01)
CPC H10H 20/8502 (2025.01) [H10H 20/01 (2025.01); H10H 20/851 (2025.01); H10H 20/853 (2025.01); H10H 20/857 (2025.01); H10H 20/0362 (2025.01); H10H 20/0364 (2025.01)] 17 Claims
OG exemplary drawing
 
1. An optoelectronic component comprising:
a carrier with a mounting area;
an optoelectronic semiconductor chip;
a conversion element;
a dielectric protective layer; and
a dielectric encapsulation,
wherein the protective layer is directly located at the mounting area in a chip mounting region,
wherein the semiconductor chip is located at the protective layer in the chip mounting region and is electrically conductively connected with the carrier,
wherein the encapsulation is directly located at the mounting area in regions adjacent to the chip mounting region and is directly located at the protective layer in an overlap region,
wherein the encapsulation is arranged exclusively in the regions adjacent to the semiconductor chip,
wherein the semiconductor chip is configured to generate a primary electromagnetic radiation,
wherein the conversion element is configured to convert at least a portion of the primary radiation into a secondary radiation,
wherein the protective layer has a higher reflectivity for the primary radiation than for the secondary radiation, and
wherein the encapsulation has a higher reflectivity for the secondary radiation than for the primary radiation.