US 12,284,846 B2
Light-emitting device with internal non-specular light redirection and position-dependent reflection, transmission, or redirection
Toni Lopez, Vaals (NL); Venkata Ananth Tamma, San Jose, CA (US); and Aimi Abass, Aachen (DE)
Assigned to Lumileds LLC, San Jose, CA (US)
Filed by Lumileds LLC, San Jose, CA (US)
Filed on May 26, 2022, as Appl. No. 17/825,143.
Claims priority of provisional application 63/197,648, filed on Jun. 7, 2021.
Prior Publication US 2022/0393076 A1, Dec. 8, 2022
Int. Cl. H10H 20/855 (2025.01); H10H 20/841 (2025.01); H01L 25/16 (2023.01); H10H 20/80 (2025.01)
CPC H10H 20/841 (2025.01) [H10H 20/855 (2025.01); H01L 25/167 (2013.01); H10H 20/872 (2025.01)] 18 Claims
OG exemplary drawing
 
1. A semiconductor light-emitting device comprising:
a semiconductor diode structure having front and back surfaces and one or more light-emitting active layers within said diode structure that are arranged so as to emit output light at a nominal vacuum wavelength λ0 to propagate within the diode structure;
a redirection layer on the back surface of the diode structure, said back-surface redirection layer including one or more of (i) an array of nano-antennae, (ii) a partial photonic bandgap structure, (iii) a photonic crystal, or (iv) an array of meta-atoms or meta-molecules, at least a portion of the back-surface redirection layer being structurally arranged, relative to the nominal output vacuum wavelength λ0, so as to exhibit non-specular internal reflective redirection of output light incident on the back surface within the diode structure; and
a layer or coating on the front surface of the diode structure, at least a portion of said front-surface layer or coating being structurally arranged so as to exhibit position-dependent internal reflective redirection, or position-dependent transmissive redirection, of output light incident on the front surface from within the diode structure,
wherein the front-surface coating or layer is structurally arranged so that (i) a first set of one or more areal regions of the front surface of the diode structure exhibits transmissivity for output light incident thereon within the diode structure, at the nominal vacuum wavelength λ0 and with the front surface against the ambient medium, that is greater than Fresnel transmissivity from an interface between an ambient medium and the front surface of the diode structure without the front-surface coating or layer, or (ii) a second set of one or more areal regions of the front surface of the diode structure, distinct from the areal regions of the first set, exhibits transmissivity for output light incident thereon within the diode structure, at the nominal vacuum wavelength λ0 and with the front surface against the ambient medium, that is less than the Fresnel transmissivity.