| CPC H10H 20/841 (2025.01) [H10H 20/821 (2025.01); H10H 20/833 (2025.01); H10H 20/835 (2025.01); H10H 20/857 (2025.01); H10H 20/032 (2025.01); H10H 20/034 (2025.01)] | 20 Claims |
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1. A semiconductor light emitting device, comprising:
a substrate;
a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially stacked on the substrate;
a transparent electrode layer on the second conductivity-type semiconductor layer;
a first insulating layer on the transparent electrode layer and having a plurality of first through-holes;
a multilayer insulating structure on the first insulating layer and having a plurality of second through-holes overlapping the plurality of first through-holes, respectively;
a reflective electrode layer on the multilayer insulating structure and connected to the transparent electrode layer through the plurality of first through-holes and the plurality of second through-holes; and
a second insulating layer between the multilayer insulating structure and the reflective electrode layer, wherein the reflective electrode layer is disposed above the second insulating layer.
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