| CPC H10D 84/834 (2025.01) [H01L 21/76224 (2013.01); H10D 84/0151 (2025.01); H10D 84/038 (2025.01)] | 18 Claims |
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1. A semiconductor device, comprising:
active fins protruding from an upper surface of a substrate, each of the active fins extending in a first direction substantially parallel to the upper surface of the substrate;
a first isolation pattern on the upper surface of the substrate, the first isolation pattern covering respective lower sidewalls of the active fins in a second direction, the second direction being substantially parallel to the upper surface of the substrate and crossing the first direction;
an isolation structure including:
a third isolation pattern extending in the first isolation pattern; and
a second isolation pattern in a trench that extends in an upper portion of the substrate and has a cross-section of a shape of a portion of a circle or an ellipse, the second isolation pattern comprising:
a lower portion on a bottom of the trench; and
an upper portion on and protruding from an edge portion of the lower portion, the upper portion contacting a lower sidewall of the third isolation pattern;
gate structures each extending in the second direction on upper surfaces of the active fins, an upper surface of the first isolation pattern, and an upper surface of the isolation structure.
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