US 12,284,822 B2
Semiconductor device comprising crystalline oxide semiconductor layer and semiconductor system having the same
Masahiro Sugimoto, Kyoto (JP); and Yasushi Higuchi, Kyoto (JP)
Assigned to FLOSFIA INC., Kyoto (JP)
Filed by FLOSFIA INC., Kyoto (JP)
Filed on May 27, 2022, as Appl. No. 17/826,724.
Application 17/826,724 is a continuation in part of application No. PCT/JP2020/043519, filed on Nov. 20, 2020.
Claims priority of application No. 2019-217103 (JP), filed on Nov. 29, 2019.
Prior Publication US 2022/0285543 A1, Sep. 8, 2022
Int. Cl. H10D 30/67 (2025.01); H10D 30/69 (2025.01); H10D 64/60 (2025.01)
CPC H10D 30/721 (2025.01) [H10D 30/6755 (2025.01); H10D 64/605 (2025.01)] 14 Claims
OG exemplary drawing
 
1. A semiconductor device comprising at least:
a crystalline oxide semiconductor layer which has a band gap of 4.5 eV or more and a field-effect mobility of 10 cm2/V·s or higher; and
a high-resistance oxide film which is in the crystalline oxide semiconductor layer and has a resistance of 1.0×106 Ω·cm or higher.