US 12,284,820 B2
Dual metal wrap-around contacts for semiconductor devices
Hiroaki Niimi, Albany, NY (US); Kandabara N Tapily, Albany, NY (US); and Takahiro Hakamata, Albany, NY (US)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Jun. 15, 2022, as Appl. No. 17/841,225.
Application 17/841,225 is a division of application No. 16/803,987, filed on Feb. 27, 2020, granted, now 11,374,101.
Claims priority of provisional application 62/812,120, filed on Feb. 28, 2019.
Claims priority of provisional application 62/812,103, filed on Feb. 28, 2019.
Prior Publication US 2022/0310812 A1, Sep. 29, 2022
Int. Cl. H10D 30/62 (2025.01); H01L 21/285 (2006.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01); H10D 30/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01)
CPC H10D 30/6219 (2025.01) [H10D 30/62 (2025.01); H10D 84/853 (2025.01); H01L 21/28518 (2013.01); H01L 21/2855 (2013.01); H01L 21/28568 (2013.01); H01L 21/76224 (2013.01); H01L 21/76865 (2013.01); H01L 21/76897 (2013.01); H10D 30/024 (2025.01); H10D 84/0193 (2025.01); H10D 84/038 (2025.01)] 16 Claims
OG exemplary drawing
 
1. A method of forming a semiconductor device, the method comprising:
providing a first raised feature in a n-type channel field effect transistor (NFET) region on a substrate;
growing a first n-type doped epitaxial semiconductor material on the first raised feature, the first n-type doped epitaxial semiconductor material having a first upward facing surface and a first downward facing surface;
forming a first contact metal on the first downward facing surface;
forming a second contact metal on the first upward facing surface;
providing a second raised feature in a p-type channel field effect transistor (PFET) region on the substrate;
growing a second p-type doped epitaxial semiconductor material on the second raised feature, the second p-type doped epitaxial semiconductor material having a second upward facing surface and a second downward facing surface;
forming a third contact metal on the second downward facing surface; and
forming a fourth contact metal on the second upward facing surface, wherein the fourth contact metal is different from the second contact metal, and the first contact metal is the different from the third contact metal.