US 12,284,811 B2
Magnetic memory device
Tadaaki Oikawa, Seoul (KR); Youngmin Eeh, Seongnam-si (KR); Eiji Kitagawa, Seoul (KR); Taiga Isoda, Seoul (KR); Ku Youl Jung, Icheon-si (KR); and Jin Won Jung, Icheon-si (KR)
Assigned to Kioxia Corporation, Tokyo (JP); and SK HYNIX INC., Gyeonggi-Do (KR)
Filed by Kioxia Corporation, Tokyo (JP); and SK hynix Inc., Icheon-si (KR)
Filed on Sep. 10, 2021, as Appl. No. 17/472,472.
Claims priority of application No. 2021-043141 (JP), filed on Mar. 17, 2021.
Prior Publication US 2022/0302205 A1, Sep. 22, 2022
Int. Cl. H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01)
CPC H10B 61/00 (2023.02) [H10N 50/10 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02)] 7 Claims
OG exemplary drawing
 
1. A magnetic memory device comprising a stacked structure comprising:
a first magnetic layer having a fixed magnetization direction;
a second magnetic layer having a variable magnetization direction;
a non-magnetic layer provided between the first magnetic layer and the second magnetic layer;
a molybdenum (Mo) layer provided on an opposite side of the non-magnetic layer with respect to the second magnetic layer;
an oxide layer provided between the second magnetic layer and the molybdenum (Mo) layer;
a ruthenium (Ru) layer provided on an opposite side of the oxide layer with respect to the molybdenum (Mo) layer;
a third magnetic layer provided on an opposite side of the non-magnetic layer with respect to the first magnetic layer, and canceling a magnetic field applied from the first magnetic layer to the second magnetic layer; and
a layer containing silicon (Si) and boron (B) and provided on an opposite side of the first magnetic layer with respect to the third magnetic layer.