US 12,284,808 B2
Three-dimensional semiconductor memory device
Jang Won Kim, Icheon-si (KR); Mi Seong Park, Icheon-si (KR); In Su Park, Icheon-si (KR); Jung Shik Jang, Icheon-si (KR); and Won Geun Choi, Icheon-si (KR)
Assigned to SK hynix Inc., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on Nov. 30, 2021, as Appl. No. 17/538,191.
Claims priority of application No. 10-2021-0077456 (KR), filed on Jun. 15, 2021.
Prior Publication US 2022/0399364 A1, Dec. 15, 2022
Int. Cl. H10B 43/27 (2023.01); H01L 21/768 (2006.01); H01L 23/535 (2006.01); H10B 41/27 (2023.01)
CPC H10B 43/27 (2023.02) [H01L 21/76805 (2013.01); H01L 21/76895 (2013.01); H01L 23/535 (2013.01); H10B 41/27 (2023.02)] 15 Claims
OG exemplary drawing
 
1. A semiconductor memory device, comprising:
a source structure; and
a gate stacked structure disposed over the source structure, the gate stacked structure having a cell array region and a contact region with a stepped shape,
wherein a roughness of a first sidewall of the cell array region of the gate stacked structure is greater than that of a second sidewall of the contact region of the gate stacked structure.