| CPC H10B 12/315 (2023.02) [H10B 12/03 (2023.02); H10B 12/033 (2023.02); H10B 12/0335 (2023.02)] | 13 Claims |
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1. A method for forming a semiconductor structure, comprising:
providing a substrate, the substrate comprising a plurality of conductive contact plugs in array distribution and insulation layers separating the conductive contact plugs;
forming a plurality of capacitive layers stacked and distributed in a direction perpendicular to the substrate on a surface of the substrate, each of the capacitive layers comprising a plurality of capacitances distributed at intervals, and the capacitances being respectively connected to different conductive contact plugs;
wherein
the forming a plurality of capacitive layers stacked and distributed in a direction perpendicular to the substrate on a surface of the substrate, each of the capacitive layer comprising a plurality of capacitances distributed at intervals, and the capacitances being respectively connected to different conductive contact plugs comprises:
forming a first capacitive layer on the surface of the substrate, the first capacitive layer comprising, a plurality of first capacitances, and the first capacitances being respectively connected to different conductive contact plugs; and
forming a second capacitive layer on a side of the first capacitive layer facing away from the substrate, the second capacitive layer comprising a plurality of second capacitances, the second capacitances being respectively connected to different, conductive contact plugs, and the conductive contact plugs connected to the second capacitances and the conductive contact plugs connected to the first capacitances being different conductive contact plugs; and
forming a first semiconductor layer covering the first capacitive layer, the first semiconductor layer being filled up a gap in the first capacitance and a gap between the first capacitances.
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