US 12,284,427 B2
Infrared detector and infrared image sensor including the same
Maxim Vladimirovich Ryabko, Moscow (RU); Anton Nikolaevich Sofronov, St. Petersburg (RU); and Sergey Nikolaevich Koptyaev, Nizhniy Tagil (RU)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Mar. 7, 2023, as Appl. No. 18/118,532.
Claims priority of application No. RU2022107356 (RU), filed on Mar. 21, 2022; and application No. 10-2022-0148189 (KR), filed on Nov. 8, 2022.
Prior Publication US 2023/0300434 A1, Sep. 21, 2023
Int. Cl. H04N 23/23 (2023.01); G01J 5/10 (2006.01); H04N 23/52 (2023.01)
CPC H04N 23/23 (2023.01) [H04N 23/52 (2023.01)] 20 Claims
OG exemplary drawing
 
1. An infrared detector comprising:
a substrate in which a void is formed;
a micro-resonator disposed over the void of the substrate;
an infrared absorber disposed on an upper surface of the micro-resonator;
a thermal isolation bridge supporting the micro-resonator;
a first waveguide optically coupled with the micro-resonator;
a second waveguide intersecting the first waveguide and optically coupled with the micro-resonator;
a light source optically coupled with the first waveguide; and
a photodetector optically coupled with the second waveguide.