US 12,283,947 B2
Switching device, electronic appliance, and vehicle
Katsuaki Yamada, Kyoto (JP); Shuntaro Takahashi, Kyoto (JP); and Muga Imamura, Kyoto (JP)
Assigned to Rohm Co., Ltd., Kyoto (JP)
Filed by ROHM CO., LTD., Kyoto (JP)
Filed on Sep. 15, 2023, as Appl. No. 18/468,089.
Application 18/468,089 is a continuation of application No. PCT/JP2022/002347, filed on Jan. 24, 2022.
Claims priority of application No. 2021-046862 (JP), filed on Mar. 22, 2021.
Prior Publication US 2024/0007103 A1, Jan. 4, 2024
Int. Cl. H03K 17/687 (2006.01)
CPC H03K 17/687 (2013.01) 10 Claims
OG exemplary drawing
 
1. A switching device, comprising:
an N-type semiconductor substrate;
a power MISFET configured to have the N-type semiconductor substrate as a drain thereof;
an input electrode configured to receive an input signal;
a control circuit configured to generate a gate control signal for the power MISFET according to the input signal; and
a negative current prevention circuit configured to be provided between the input electrode and the control circuit to prevent a negative current from passing toward the input electrode,
wherein
the negative current prevention circuit includes:
a P-channel MISFET configured to be connected, with a drain thereof toward the input electrode and a source and a back gate thereof both toward the control circuit, between the input electrode and the control circuit, a gate of the P-channel MISFET being fed with a fixed potential, a potential at the back gate of the P-channel MISFET being separated from a potential of the N-type semiconductor substrate; and
a diode configured to be connected, with an anode thereof toward the input electrode and a cathode thereof toward the control circuit, between the input electrode and the control circuit.