US 12,283,945 B2
Drive circuit for semiconductor switching device
Takuya Sakai, Tokyo (JP); and Kohei Onda, Tokyo (JP)
Assigned to MITSUBISHI ELECTRIC CORPORATION, Tokyo (JP)
Appl. No. 18/274,724
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
PCT Filed Feb. 17, 2021, PCT No. PCT/JP2021/005826
§ 371(c)(1), (2) Date Jul. 28, 2023,
PCT Pub. No. WO2022/176040, PCT Pub. Date Aug. 25, 2022.
Prior Publication US 2024/0128966 A1, Apr. 18, 2024
Int. Cl. H03K 17/082 (2006.01); H03K 17/16 (2006.01); H03K 17/08 (2006.01)
CPC H03K 17/0828 (2013.01) [H03K 17/168 (2013.01); H03K 2017/0806 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A drive circuit for a semiconductor switching device, the drive circuit comprising:
a control circuit to output a drive signal to the semiconductor switching device in synchronization with an input signal;
a gate drive circuit to drive the semiconductor switching device on a basis of the drive signal; and
a detection circuit to output a feedback signal and an adjustment current when a voltage of a high-voltage side main terminal of the semiconductor switching device is equal to or higher than a preset threshold value in a period in which the gate drive circuit turns off the semiconductor switching device to cut off a current, wherein
the detection circuit includes a capacitor connected to the high-voltage side main terminal, a diode which is connected in series with the capacitor and whose anode terminal is connected on a side of the high-voltage side main terminal, and a resistor connected in series with the diode, and outputs a voltage at a connection point between the diode and the resistor as the feedback signal,
the control circuit diagnoses a state of the semiconductor switching device or controls a signal to be outputted to the gate drive circuit on a basis of the feedback signal, and
a gate current that is an output of the gate drive circuit is adjusted by the adjustment current.