US 12,283,941 B2
Baw resonators with antisymmetric thick electrodes
Dae Ho Kim, Cornelius, NC (US); Mary Winters, Webster, NY (US); and Zhiqiang Bi, Mooresville, NC (US)
Assigned to Akoustis, Inc., Huntersville, NC (US)
Filed by Akoustis, Inc., Huntersville, NC (US)
Filed on Jun. 22, 2023, as Appl. No. 18/339,939.
Application 18/339,939 is a continuation of application No. 17/130,915, filed on Dec. 22, 2020, granted, now 11,695,390, issued on Jul. 4, 2023.
Application 17/130,915 is a continuation of application No. 16/389,806, filed on Apr. 19, 2019, granted, now 10,879,872, issued on Dec. 29, 2020.
Prior Publication US 2023/0336151 A1, Oct. 19, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H03H 9/13 (2006.01); H03H 9/02 (2006.01); H03H 9/17 (2006.01); H03H 9/54 (2006.01)
CPC H03H 9/132 (2013.01) [H03H 9/02015 (2013.01); H03H 9/02157 (2013.01); H03H 9/131 (2013.01); H03H 9/171 (2013.01); H03H 9/547 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of using a resonator circuit device, the method comprising:
in the resonator circuit device comprising a piezoelectric layer;
a front-side electrode overlying the piezoelectric layer, the front-side electrode having a first connection region and a first resonator region, the front-side electrode having a first partial mass-loaded structure configured within a vicinity of the first connection region; and
a back-side electrode underlying the piezoelectric layer, the back-side electrode having a second connection region and a second resonator region, the back-side electrode having a second partial mass-loaded structure configured within a vicinity of the second connection region such that
the front-side electrode and the back-side electrode are spatially configured in an anti-symmetrical manner with the first and second resonator regions at least partially overlapping and the first and second connection regions on opposing sides,
operating the resonator circuit device configured with the anti-symmetrical manner of the front-side electrode and the back-side electrode using a frequency to generate a Q factor.