| CPC H03H 9/1021 (2013.01) [H03H 3/02 (2013.01); H03H 9/19 (2013.01); H03H 2003/022 (2013.01)] | 8 Claims |
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1. A vibration device comprising:
a semiconductor substrate having a first surface at which an integrated circuit is provided and a second surface that is a rear surface with respect to the first surface, which is a front surface;
a vibration element disposed at the first surface;
a lid having a recess that opens toward the first surface and a contact surface that is in contact with the first surface in such a way that the vibration element is accommodated in the recess, the lid being bonded to the first surface via the contact surface; and
a metal layer disposed between the first surface and the contact surface, wherein
at least part of the integrated circuit overlaps with the metal layer in a plan view viewed in a direction of a normal to the first surface
a third metal layer that is electrically continuous with the metal layer is provided at a bottom surface of the recess of the lid, and
the lid is formed of a silicon substrate, the third metal layer has a thickness smaller than or equal to 20 nm, and infrared light can pass through the lid and the third metal laver.
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