US 12,283,791 B2
Semiconductor laser chip and preparation method therefor
Chao-Chen Cheng, Shenzhen (CN); and Anh Chuong Tran, Shenzhen (CN)
Assigned to YLX INCORPORATED, Shenzhen (CN)
Appl. No. 17/296,142
Filed by YLX INCORPORATED, Shenzhen (CN)
PCT Filed Oct. 16, 2019, PCT No. PCT/CN2019/111425
§ 371(c)(1), (2) Date Oct. 22, 2021,
PCT Pub. No. WO2020/103613, PCT Pub. Date May 28, 2020.
Claims priority of application No. 201811393166.9 (CN), filed on Nov. 21, 2018.
Prior Publication US 2022/0059986 A1, Feb. 24, 2022
Int. Cl. H01S 5/024 (2006.01); H01S 5/02 (2006.01); H01S 5/022 (2021.01); H01S 5/0236 (2021.01); H01S 5/026 (2006.01); H01S 5/10 (2021.01)
CPC H01S 5/02469 (2013.01) [H01S 5/0215 (2013.01); H01S 5/022 (2013.01); H01S 5/0236 (2021.01); H01S 5/0265 (2013.01); H01S 5/1021 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A preparation method for a semiconductor laser chip, comprising the following steps:
S11: providing an epitaxial wafer, the epitaxial wafer comprising a plurality of resonant cavities arranged in parallel;
S12: providing a heat sink substrate comprising a first surface and a second surface that are oppositely disposed;
S13: bonding the epitaxial wafer to the first surface of the heat sink substrate to form a first chip semi-finished product;
S14: performing a first division on the first chip semi-finished product in a direction perpendicular to the resonant cavities, to divide the first chip semi-finished product into a plurality of second chip semi-finished products;
S15: performing a second division on the second chip semi-finished products in a direction parallel to the resonant cavities to divide the second chip semi-finished products into a plurality of semiconductor laser chips, so that each of the semiconductor laser chips comprises a portion of the heat sink substrate and at least one laser bar bonded to the portion of the heat sink substrate;
wherein the step S14 comprises performing a first cutting on the heat sink substrate of the first chip semi-finished product in the direction perpendicular to the resonance cavities to form first cutting slits, and a depth of each of the first cutting slits is greater than or equal to a thickness of the heat sink substrate.