US 12,283,643 B2
Photovoltaic module, solar cell, and method for producing solar cell
Jie Yang, Shanghai (CN); Wenqi Li, Shanghai (CN); Xueting Yuan, Shanghai (CN); Xinyu Zhang, Shanghai (CN); and Hao Jin, Shanghai (CN)
Assigned to JINKO GREEN ENERGY (SHANGHAI) MANAGEMENT CO., LTD, Shanghai (CN); and ZHEJIANG JINKO SOLAR CO., LTD, Zhejiang (CN)
Filed by JINKO GREEN ENERGY (SHANGHAI) MANAGEMENT CO., LTD., Shanghai (CN); and ZHEJIANG JINKO SOLAR CO., LTD, Zhejiang (CN)
Filed on Jun. 23, 2023, as Appl. No. 18/213,694.
Application 18/213,694 is a continuation of application No. 17/197,912, filed on Mar. 10, 2021, granted, now 11,742,447.
Application 17/197,912 is a continuation of application No. 16/901,143, filed on Jun. 15, 2020, granted, now 10,991,838, issued on Apr. 27, 2021.
Claims priority of application No. 202010477787.6 (CN), filed on May 29, 2020.
Prior Publication US 2023/0335658 A1, Oct. 19, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 31/054 (2014.01); H01L 31/0216 (2014.01); H01L 31/048 (2014.01); H01L 31/18 (2006.01)
CPC H01L 31/0543 (2014.12) [H01L 31/02168 (2013.01); H01L 31/0481 (2013.01); H01L 31/1868 (2013.01); Y02E 10/50 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A solar cell, comprising:
a silicon substrate; and
a passivation film stack provided on a back surface of the silicon substrate,
wherein the passivation film stack comprises:
a first passivation layer provided on the back surface of the silicon substrate and comprising at least one of a silicon oxynitride film layer, a silicon oxycarbide film layer or a silicon oxynitride carbide film layer;
a second passivation layer provided on a surface of the first passivation layer and comprising an oxygen-rich and nitrogen-rich silicon oxynitride film layer or silicon oxynitride carbide film layer; and
a third passivation layer provided on a surface of the second passivation layer and made of silicon nitride,
wherein a silicon atom concentration of the first passivation layer ranges from 5×1021/cm3 to 2.5×1022/cm3.