US 12,283,635 B2
Transistor device having ultraviolet attenuating capability
Katherine H. Chiang, Hsinchu (TW); Neil Quinn Murray, Hsinchu (TW); Ming-Yen Chuang, Hsinchu (TW); and Chung-Te Lin, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Feb. 20, 2024, as Appl. No. 18/581,738.
Application 18/581,738 is a continuation of application No. 17/243,102, filed on Apr. 28, 2021, granted, now 11,935,966.
Prior Publication US 2024/0194796 A1, Jun. 13, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/786 (2006.01); H01L 29/423 (2006.01)
CPC H01L 29/78696 (2013.01) [H01L 29/42384 (2013.01); H01L 29/7869 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A transistor device, comprising:
a first source/drain region and a second source/drain region spaced apart from each other;
a channel layer electrically connected to the first source/drain region and the second source/drain region;
a UV-attenuating layer disposed on the channel layer to protect the channel layer from characteristic degradation caused by UV light; and
a capping layer disposed on the channel layer, the UV-attenuating layer being inserted in the capping layer.