US 12,283,632 B2
Semiconductor device and method for manufacturing semiconductor device
Shunpei Yamazaki, Setagaya (JP); Tsutomu Murakawa, Isehara (JP); Yoshinori Ando, Atsugi (JP); Tetsuya Kakehata, Isehara (JP); Yuichi Sato, Isehara (JP); and Ryota Hodo, Atsugi (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Appl. No. 17/608,189
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
PCT Filed Apr. 28, 2020, PCT No. PCT/IB2020/053961
§ 371(c)(1), (2) Date Nov. 2, 2021,
PCT Pub. No. WO2020/229919, PCT Pub. Date Nov. 19, 2020.
Claims priority of application No. 2019-089721 (JP), filed on May 10, 2019.
Prior Publication US 2022/0246763 A1, Aug. 4, 2022
Int. Cl. H01L 29/786 (2006.01); H01L 29/66 (2006.01); H10B 12/00 (2023.01)
CPC H01L 29/7869 (2013.01) [H01L 29/66742 (2013.01); H01L 29/78696 (2013.01); H10B 12/30 (2023.02)] 10 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first insulator;
a first oxide over the first insulator;
a first conductor and a second conductor over the first oxide;
a first layer and a second layer which are in contact with a side surface of the first oxide;
a second insulator over the first insulator, the first layer, the second layer, the first conductor, and the second conductor;
a third insulator over the second insulator;
a fourth insulator between the first conductor and the second conductor and over the first oxide; and
a third conductor over the fourth insulator,
wherein the second insulator is in contact with a top surface of the first insulator, a side surface of the first layer, a side surface of the second layer, a top surface of the first conductor, and a top surface of the second conductor;
wherein each of the first layer and the second layer comprises a metal contained in the first conductor and the second conductor,
wherein the first insulator comprises a region in contact with the second insulator, and
wherein a concentration of the metal in the region is lower than a concentration of the metal in the first layer or the second layer.