US 12,283,629 B2
Ferroelectric thin-film structure and electronic device including the same
Yunseong Lee, Osan-si (KR); Jinseong Heo, Seoul (KR); Sangwook Kim, Suwon-si (KR); Taehwan Moon, Suwon-si (KR); and Sanghyun Jo, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Apr. 19, 2023, as Appl. No. 18/303,288.
Application 18/303,288 is a continuation of application No. 17/112,355, filed on Dec. 4, 2020, granted, now 11,646,375.
Claims priority of application No. 10-2020-0026794 (KR), filed on Mar. 3, 2020.
Prior Publication US 2023/0253498 A1, Aug. 10, 2023
Int. Cl. H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 29/51 (2006.01); H10B 51/30 (2023.01)
CPC H01L 29/78391 (2014.09) [H01L 29/516 (2013.01); H10B 51/30 (2023.02); H01L 21/02181 (2013.01); H01L 21/02189 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An electronic device comprising:
a semiconductor substrate including a first channel region, a first source and a first drain each connected to the first channel region, a second channel region, and a second source and a second drain each connected to the second channel region;
a first transistor including the first channel region, the first source, the first drain, a first ferroelectric layer comprising HfO2-based material on the first channel region, and a first gate electrode on the first ferroelectric layer; and
a second transistor including the second channel region, the second source, the second drain, a second ferroelectric layer comprising HfO2-based material on the second channel region, and a second gate electrode on the second ferroelectric layer,
wherein the first ferroelectric layer has a composition different from a composition of the second ferroelectric layer,
wherein the first ferroelectric layer and the second ferroelectric layer each include a first atomic layer including HfO2 and a second atomic layer including ZrO2,
wherein the second ferroelectric layer includes a third atomic layer, the third atomic layer includes HfO2 doped with a dopant or ZrO2 doped with the dopant, and the dopant includes one of Si, Al, La, Y, Sr, and Gd, and
wherein the first ferroelectric layer does not include the third atomic layer.