US 12,283,621 B2
Semiconductor device having a transistor with trenches and mesas
Caspar Leendertz, Munich (DE); Markus Beninger-Bina, Grosshelfendorf (DE); Matteo Dainese, Munich (DE); Alice Pei-Shan Leendertz, Unterhaching (DE); and Christian Philipp Sandow, Haar (DE)
Assigned to Infineon Technologies Austria AG, Villach (AT)
Filed by Infineon Technologies Austria AG, Villach (AT)
Filed on Feb. 15, 2023, as Appl. No. 18/109,997.
Application 17/144,193 is a division of application No. 16/219,108, filed on Dec. 13, 2018, granted, now 10,923,578, issued on Feb. 16, 2021.
Application 18/109,997 is a continuation of application No. 17/144,193, filed on Jan. 8, 2021, granted, now 11,610,976.
Claims priority of application No. 102017129955.6 (DE), filed on Dec. 14, 2017.
Prior Publication US 2023/0197828 A1, Jun. 22, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/739 (2006.01)
CPC H01L 29/66348 (2013.01) [H01L 29/0696 (2013.01); H01L 29/083 (2013.01); H01L 29/1095 (2013.01); H01L 29/404 (2013.01); H01L 29/407 (2013.01); H01L 29/417 (2013.01); H01L 29/7396 (2013.01); H01L 29/7397 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising a transistor, the transistor comprising:
a drift region of a first conductivity type in a semiconductor substrate having a first main surface;
a body region of a second conductivity type between the drift region and the first main surface;
a plurality of trenches in the first main surface and patterning the semiconductor substrate into a plurality of mesas comprising a first mesa, the plurality of trenches comprising an active trench, a first source trench and a second source trench, wherein a conductive material in the first and second source trenches is electrically connected to a source terminal;
a gate electrode arranged in the active trench;
a source region of the first conductivity type in the first mesa, the first mesa being arranged adjacent to the active trench;
a second mesa between the first and second source trenches, the second mesa being in contact with at least one of the first and the second source trenches; and
a barrier region of the first conductivity type at a higher doping concentration than the doping concentration of the drift region,
wherein the barrier region is arranged between the body region and the drift region in the second mesa.