US 12,283,619 B2
Nitride semiconductor device and method of manufacturing the same
Takashi Okawa, Nisshin (JP); Hidemoto Tomita, Nisshin (JP); Toshiyuki Kawaharamura, Kami (JP); and Li Liu, Kami (JP)
Assigned to DENSO CORPORATION, Kariya (JP); TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota (JP); MIRISE Technologies Corporation, Nisshin (JP); and Kochi Prefectural Public University Corporation, Kochi (JP)
Filed by DENSO CORPORATION, Kariya (JP); TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota (JP); MIRISE Technologies Corporation, Nisshin (JP); and Kochi Prefectural Public University Corporation, Kochi (JP)
Filed on Feb. 2, 2022, as Appl. No. 17/591,012.
Claims priority of application No. 2021-029176 (JP), filed on Feb. 25, 2021.
Prior Publication US 2022/0271144 A1, Aug. 25, 2022
Int. Cl. H01L 29/51 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01)
CPC H01L 29/518 (2013.01) [H01L 21/0214 (2013.01); H01L 21/28264 (2013.01); H01L 29/513 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A method for manufacturing a nitride semiconductor device, the method comprising:
forming a gate insulation film above a nitride semiconductor layer,
wherein the forming of the gate insulation film includes utilizing a mist chemical vapor deposition method to form a silicon oxynitride film in contact with a surface of the nitride semiconductor layer,
wherein the forming of the silicon oxynitride film includes oxidizing a film source material having both of silicon and nitride in a molecule to form the silicon oxynitride film, and
wherein ammonia is not used as a nitrogen source in the mist chemical vapor deposition method.