US 12,283,618 B2
Inner spacer for semiconductor device
Fu-Ting Yen, Hsinchu (TW); Kuei-Lin Chan, Hsinchu (TW); and Yu-Yun Peng, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Apr. 8, 2022, as Appl. No. 17/716,192.
Prior Publication US 2023/0326988 A1, Oct. 12, 2023
Int. Cl. H01L 29/423 (2006.01); H01L 21/3115 (2006.01); H01L 21/8234 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01)
CPC H01L 29/42392 (2013.01) [H01L 21/31155 (2013.01); H01L 21/823412 (2013.01); H01L 21/823418 (2013.01); H01L 21/823437 (2013.01); H01L 29/0665 (2013.01); H01L 29/41775 (2013.01); H01L 29/66553 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for manufacturing a device, comprising:
forming a first nanosheet segment and a second nanosheet segment alternating with the first nanosheet segment;
forming a gate structure over the first nanosheet segment and the second nanosheet segment such that a first end region of each of the first nanosheet segment and the second nanosheet segment is exposed from a first source/drain recess, and such that a second end region of each of the first nanosheet segment and the second nanosheet segment is exposed from a second source/drain recess;
removing the first end region and the second end region of the second nanosheet segment to form a first lateral recess and a second lateral recess, respectively;
forming a first inner spacer portion to fill the first lateral recess, and forming a second inner spacer portion to fill the second lateral recess;
performing a treatment to permit each of the first inner spacer portion and the second inner spacer portion to have a carbon-rich region;
forming a first source/drain portion and a second source/drain portion respectively in the first source/drain recess and the second source/drain recess;
removing a portion of the gate structure to form an upper cavity;
removing a remaining region of the second nanosheet segment through the upper cavity so as to form a lower cavity; and
forming a gate portion in the upper cavity and the lower cavity.