US 12,283,617 B2
Interconnect features with sharp corners and method forming same
Tze-Liang Lee, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Aug. 7, 2023, as Appl. No. 18/366,352.
Application 18/366,352 is a division of application No. 17/326,848, filed on May 21, 2021, granted, now 12,002,865.
Claims priority of provisional application 63/166,329, filed on Mar. 26, 2021.
Prior Publication US 2023/0387231 A1, Nov. 30, 2023
Int. Cl. H01L 29/423 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/42376 (2013.01) [H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823456 (2013.01); H01L 21/823475 (2013.01); H01L 27/0886 (2013.01); H01L 29/401 (2013.01); H01L 29/41791 (2013.01); H01L 29/4236 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A structure comprising:
a plurality of conductive features having lengthwise directions aligned to a straight line, wherein the plurality of conductive features comprise:
a first pair of conductive features spaced apart by a first spacing, wherein first end portions of the first pair of conductive features face each other, and the first end portions have a first radius in a top view of the structure; and
a second pair of conductive features spaced apart by a second spacing smaller than the first spacing, wherein second end portions of the second pair of conductive features face each other, and the second end portions have a second radius in the top view of the structure, and wherein the second radius is smaller than the first radius; and
a dielectric layer, wherein the plurality of conductive features are in the dielectric layer.