US 12,283,615 B2
Semiconductor device with multiple electrodes and an insulation film
Hiroki Hatada, Kanazawa Ishikawa (JP); and Kohei Oasa, Setagaya Tokyo (JP)
Assigned to Kabushiki Kaisha Toshiba, Tokyo (JP); and Toshiba Electronic Devices & Storage Corporation, Tokyo (JP)
Filed by Kabushiki Kaisha Toshiba, Tokyo (JP); and Toshiba Electronic Devices & Storage Corporation, Tokyo (JP)
Filed on Feb. 10, 2022, as Appl. No. 17/669,309.
Claims priority of application No. 2021-150214 (JP), filed on Sep. 15, 2021.
Prior Publication US 2023/0085094 A1, Mar. 16, 2023
Int. Cl. H01L 29/41 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/41775 (2013.01) [H01L 29/0696 (2013.01); H01L 29/404 (2013.01); H01L 29/407 (2013.01); H01L 29/66734 (2013.01); H01L 29/7813 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first electrode;
a semiconductor part located on the first electrode;
a second electrode located in the semiconductor part, the second electrode extending in a first direction when viewed from above;
a third electrode located in the semiconductor part, the third electrode extending in the first direction, the third electrode including a first portion, a second portion, and a first middle portion positioned below the second electrode between the first portion and the second portion, the second electrode being located between the first portion and the second portion in the first direction;
a fourth electrode located above the semiconductor part, the fourth electrode including
a pad portion separated from the second electrode and the second portion in a second direction crossing the first direction when viewed from above, and
a protrusion protruding from the pad portion and covering the second electrode, the protrusion being connected to the second electrode;
a fifth electrode located above the semiconductor part and separated from the fourth electrode, the fifth electrode including
a first covering portion covering a first contact portion of the semiconductor part adjacent to the second portion when viewed from above, the first covering portion being connected to the first contact portion, and
a second covering portion covering the first portion, the second covering portion being connected to the first portion; and
a first insulating film located between the semiconductor part and the second electrode, between the semiconductor part and the third electrode, and between the second electrode and the third electrode;
wherein the pad portion includes an end portion in a direction from the second portion toward the first portion, and the protrusion protrudes from the end portion of the pad portion.