US 12,283,614 B2
Semiconductor device
Shinji Onduka, Nonoichi Ishikawa (JP); and Akira Ezaki, Nonoichi Ishikawa (JP)
Assigned to Kabushiki Kaisha Toshiba, Tokyo (JP); and Toshiba Electronic Devices & Storage Corporation, Tokyo (JP)
Filed by Kabushiki Kaisha Toshiba, Tokyo (JP); and Toshiba Electronic Devices & Storage Corporation, Tokyo (JP)
Filed on Jan. 10, 2024, as Appl. No. 18/409,785.
Application 18/409,785 is a division of application No. 17/007,032, filed on Aug. 31, 2020, abandoned.
Claims priority of application No. 2020-047277 (JP), filed on Mar. 18, 2020.
Prior Publication US 2024/0145558 A1, May 2, 2024
Int. Cl. H01L 29/417 (2006.01); H01L 21/268 (2006.01); H01L 21/304 (2006.01); H01L 21/3065 (2006.01); H01L 21/78 (2006.01); H01L 29/40 (2006.01); H01L 29/49 (2006.01)
CPC H01L 29/41741 (2013.01) [H01L 21/268 (2013.01); H01L 21/78 (2013.01); H01L 29/401 (2013.01); H01L 21/3043 (2013.01); H01L 21/3065 (2013.01); H01L 29/4975 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A method for manufacturing a semiconductor device, comprising:
preparing a substrate containing a semiconductor material and having a first surface and a second surface, the substrate being provided with an electrode containing a metal material on the first surface and a first protective film on the electrode;
forming a first groove extending on the substrate in a first direction by performing first irradiation with a first laser on the first protective film to lose a portion of the first protective film, a portion of the electrode, and a portion of the substrate on a side of the first surface, mixed members being formed at both ends of the first groove in a second direction perpendicular to the first direction and in contact with the electrode and the substrate, the mixed members containing the metal material and the semiconductor material;
removing the first protective film; and
dicing the substrate in the first groove to cut the substrate.