US 12,283,613 B2
Gate structures in transistors and method of forming same
Hsin-Yi Lee, Hsinchu (TW); Cheng-Lung Hung, Hsinchu (TW); and Chi On Chui, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jan. 22, 2024, as Appl. No. 18/418,678.
Application 18/418,678 is a continuation of application No. 17/854,244, filed on Jun. 30, 2022, granted, now 11,916,114.
Application 17/854,244 is a continuation of application No. 17/084,357, filed on Oct. 29, 2020, granted, now 11,437,474, issued on Sep. 6, 2022.
Claims priority of provisional application 63/066,362, filed on Aug. 17, 2020.
Prior Publication US 2024/0162303 A1, May 16, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/40 (2006.01); H01L 21/28 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01)
CPC H01L 29/401 (2013.01) [H01L 21/28088 (2013.01); H01L 21/28176 (2013.01); H01L 21/823842 (2013.01); H01L 27/092 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01); H01L 29/66742 (2013.01); H01L 29/66787 (2013.01); H01L 29/78696 (2013.01); H01L 21/823807 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a first semiconductor structure;
a second semiconductor structure over the first semiconductor structure;
a first high-k gate dielectric around the first semiconductor structure;
a second high-k gate dielectric around the second semiconductor structure, wherein the first high-k gate dielectric and the second high-k gate dielectric each comprise fluorine; and
a gate electrode over the first and second high-k gate dielectrics, wherein the gate electrode comprises:
a first work function metal, wherein the first work function metal comprises fluorine;
a second work function metal over the first work function metal; and
a tungsten residue between the first work function metal and the second work function metal.