US 12,283,612 B1
Metal oxide and transistor including metal oxide
Shunpei Yamazaki, Setagaya (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed on Feb. 2, 2024, as Appl. No. 18/430,771.
Application 18/430,771 is a continuation of application No. 17/825,209, filed on May 26, 2022, granted, now 11,923,423.
Application 17/825,209 is a continuation of application No. 16/975,833, granted, now 11,387,330, issued on Jul. 12, 2022, previously published as PCT/IB2019/051595, filed on Feb. 28, 2019.
Claims priority of application No. 2018-044786 (JP), filed on Mar. 12, 2018; application No. 2018-049535 (JP), filed on Mar. 16, 2018; application No. 2018-055807 (JP), filed on Mar. 23, 2018; and application No. 2018-055943 (JP), filed on Mar. 23, 2018.
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/24 (2006.01); H01L 29/04 (2006.01); H01L 29/10 (2006.01); H01L 29/786 (2006.01); H01L 29/06 (2006.01)
CPC H01L 29/24 (2013.01) [H01L 29/04 (2013.01); H01L 29/1033 (2013.01); H01L 29/0673 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A transistor comprising:
a crystalline metal oxide; and
a gate, a source, and a drain,
wherein the crystalline metal oxide comprising a first layer and a second layer,
wherein the first layer has a wider bandgap than the second layer,
wherein the first layer and the second layer form a crystal lattice, and
wherein in the case where a temperature increases, the crystalline metal oxide is configured such that a thickness of the second layer in a c-axis direction is decreased.