US 12,283,611 B2
Semiconductor structure
Po Jung Lin, Hsinchu (TW); and Tzu-Yao Lin, Hsinchu (TW)
Assigned to GlobalWafers Co., Ltd., Hsinchu (TW)
Filed by GlobalWafers Co., Ltd., Hsinchu (TW)
Filed on May 26, 2022, as Appl. No. 17/824,910.
Claims priority of application No. 110129313 (TW), filed on Aug. 9, 2021.
Prior Publication US 2023/0045328 A1, Feb. 9, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/20 (2006.01); H01L 21/02 (2006.01)
CPC H01L 29/2003 (2013.01) [H01L 21/02145 (2013.01); H01L 21/0254 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a substrate;
a first nitride layer formed on the substrate;
a polarity inversion layer formed at a surface of the first nitride layer to convert a non-metallic polar surface of the first nitride layer into a metallic polar surface of the polarity inversion layer;
a second nitride layer formed on the polarity inversion layer; and
a third nitride layer formed on the second nitride layer.