US 12,283,606 B2
Light-emitting device
Chao-Hsing Chen, Hsinchu (TW); I-Lun Ma, Hsinchu (TW); Bo-Jiun Hu, Hsinchu (TW); Yu-Ling Lin, Hsinchu (TW); and Chien-Chih Liao, Hsinchu (TW)
Assigned to EPISTAR CORPORATION, Hsinchu (TW)
Filed by EPISTAR CORPORATION, Hsinchu (TW)
Filed on Feb. 15, 2024, as Appl. No. 18/442,843.
Application 18/442,843 is a continuation of application No. 17/348,080, filed on Jun. 15, 2021, granted, now 11,942,509.
Application 17/348,080 is a continuation of application No. 16/510,388, filed on Jul. 12, 2019, granted, now 11,063,087, issued on Jul. 13, 2021.
Claims priority of application No. 107124067 (TW), filed on Jul. 12, 2018.
Prior Publication US 2024/0194724 A1, Jun. 13, 2024
Int. Cl. H01L 27/15 (2006.01); H01L 33/24 (2010.01); H01L 33/38 (2010.01); H01L 33/46 (2010.01); H01L 33/62 (2010.01); H01L 33/00 (2010.01); H01L 33/12 (2010.01); H01L 33/30 (2010.01); H01L 33/42 (2010.01)
CPC H01L 27/156 (2013.01) [H01L 33/24 (2013.01); H01L 33/385 (2013.01); H01L 33/0075 (2013.01); H01L 33/0093 (2020.05); H01L 33/12 (2013.01); H01L 33/30 (2013.01); H01L 33/42 (2013.01); H01L 33/46 (2013.01); H01L 33/62 (2013.01); H01L 2933/0016 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A light-emitting device, comprising:
a substrate;
a first light-emitting unit and a second light-emitting unit on the substrate, each of the first light-emitting unit and the second light-emitting unit comprises a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first light-emitting unit comprises a first surrounding part exposing the first semiconductor layer of the first light-emitting unit, and the second light-emitting unit comprises a second surrounding part exposing the first semiconductor layer of the second light-emitting unit;
a trench formed between the first light-emitting unit and the second light-emitting unit to expose the substrate;
a second insulating layer comprising a first opening on the first surrounding part of the first light-emitting unit and a second opening on the second semiconductor layer of the second light-emitting unit, wherein the second opening of the second insulating layer comprises a first opening area larger than a second opening area of the first opening of the second insulating layer; and
one or a plurality of connecting electrodes each comprising a first connecting part formed on the first light-emitting unit and electrically connected to the first semiconductor layer through the first opening of the second insulating layer, a second connecting part formed on the second light-emitting unit and electrically connected to the second semiconductor layer of the second light-emitting unit through the second opening of the second insulating layer, and a third connecting part formed in the trench to connect the first connecting part and the second connecting part.