| CPC H01L 27/156 (2013.01) [H01L 33/0093 (2020.05); H01L 33/24 (2013.01); H01L 33/38 (2013.01); H01L 33/44 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01)] | 13 Claims |

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1. A micro-column light-emitting element comprising:
a first semiconductor layer doped with an n-type dopant;
a second semiconductor layer doped with a p-type dopant;
a light-emitting layer disposed between the first semiconductor layer and the second semiconductor layer;
an electrode layer disposed on the second semiconductor layer;
an insulating structure disposed on the electrode layer and having a maximum diameter smaller than a diameter of the electrode layer; and
an insulating film that surrounds side surfaces of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer.
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9. A display device comprising:
a first substrate;
a first electrode disposed on the first substrate;
a second electrode spaced apart from the first electrode;
a first insulating layer disposed on the first substrate and covering the first electrode and the second electrode;
a plurality of micro-column light-emitting elements disposed on the first insulating layer and including end portions disposed on the first electrode and the second electrode;
first contact electrode that electrically contacts the first electrode and first end portions of the plurality of micro-column light-emitting elements; and
a second contact electrode that electrically contacts the second electrode and second end portions of the plurality of micro-column light-emitting elements,
wherein each of the plurality of micro-column light-emitting elements includes:
a first semiconductor layer doped with an n-type dopant;
a second semiconductor layer doped with a p-type dopant;
a light-emitting layer disposed between the first and second semiconductor layers;
an electrode layer disposed on the second semiconductor layer;
an insulating structure disposed on the electrode layer and having a maximum diameter smaller than a diameter of the electrode layer; and
an insulating film that surrounds side surfaces of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer.
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