US 12,283,592 B2
Semiconductor device and electronic equipment
Shinya Morita, Kanagawa (JP); and Katsuhiko Takeuchi, Kanagawa (JP)
Assigned to SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Appl. No. 17/755,355
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
PCT Filed Oct. 15, 2020, PCT No. PCT/JP2020/038900
§ 371(c)(1), (2) Date Apr. 27, 2022,
PCT Pub. No. WO2021/090657, PCT Pub. Date May 14, 2021.
Claims priority of application No. 2019-200539 (JP), filed on Nov. 5, 2019.
Prior Publication US 2022/0399329 A1, Dec. 15, 2022
Int. Cl. H01L 27/06 (2006.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01); H01L 49/02 (2006.01)
CPC H01L 27/0605 (2013.01) [H01L 27/0629 (2013.01); H01L 28/60 (2013.01); H01L 29/2003 (2013.01); H01L 29/7786 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
a semiconductor material layer on the substrate, wherein the semiconductor material layer includes a channel layer;
a pair of source/drain electrodes on the semiconductor material layer;
an interlayer insulating layer on the semiconductor material layer, wherein the interlayer insulating layer includes the pair of source/drain electrodes;
a gate insulating film;
a gate electrode between the pair of source/drain electrodes, wherein the gate electrode is on the semiconductor material layer via the gate insulating film;
a capacitor comprising a pair of specific electrodes and an insulating film, wherein the insulating film is between the pair of specific electrodes; and
a connection path, wherein
the connection path is between at least one of the pair of source/drain electrodes, and the gate electrode,
the capacitor is along the connection path in the same layer as the gate insulating film, and
the capacitor is configured to undergo dielectric breakdown at a voltage lower than a dielectric breakdown voltage of the gate insulating film.