US 12,283,566 B2
Semiconductor device and method for manufacturing the same
Akihiro Kimura, Kyoto (JP); and Takeshi Sunaga, Kyoto (JP)
Assigned to ROHM CO., LTD., Kyoto (JP)
Filed by ROHM CO., LTD., Kyoto (JP)
Filed on Jun. 29, 2023, as Appl. No. 18/343,888.
Application 18/343,888 is a continuation of application No. 17/751,239, filed on May 23, 2022, granted, now 11,735,561.
Application 17/751,239 is a continuation of application No. 16/904,167, filed on Jun. 17, 2020, granted, now 11,367,704, issued on Jun. 21, 2022.
Application 16/904,167 is a continuation of application No. 16/669,066, filed on Oct. 30, 2019, granted, now 10,707,185, issued on Jul. 7, 2020.
Application 16/669,066 is a continuation of application No. 16/251,171, filed on Jan. 18, 2019, granted, now 10,497,666, issued on Dec. 3, 2019.
Application 16/251,171 is a continuation of application No. 15/474,727, filed on Mar. 30, 2017, granted, now 10,186,496, issued on Jan. 22, 2019.
Application 15/474,727 is a continuation of application No. 15/091,410, filed on Apr. 5, 2016, granted, now 9,653,384, issued on May 16, 2017.
Application 15/091,410 is a continuation of application No. 14/009,993, granted, now 9,324,677, issued on Apr. 26, 2016, previously published as PCT/JP2012/058878, filed on Apr. 2, 2012.
Claims priority of application No. 2011-082406 (JP), filed on Apr. 4, 2011; application No. 2011-082407 (JP), filed on Apr. 4, 2011; and application No. 2011-092709 (JP), filed on Apr. 19, 2011.
Prior Publication US 2023/0343744 A1, Oct. 26, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/00 (2006.01); H01L 21/52 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); H01L 23/495 (2006.01); H01L 25/065 (2023.01)
CPC H01L 24/81 (2013.01) [H01L 21/52 (2013.01); H01L 21/56 (2013.01); H01L 21/568 (2013.01); H01L 23/293 (2013.01); H01L 23/3114 (2013.01); H01L 23/3142 (2013.01); H01L 23/49541 (2013.01); H01L 23/49548 (2013.01); H01L 23/49575 (2013.01); H01L 23/49582 (2013.01); H01L 24/11 (2013.01); H01L 24/16 (2013.01); H01L 24/71 (2013.01); H01L 24/90 (2013.01); H01L 25/0657 (2013.01); H01L 24/45 (2013.01); H01L 24/49 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/11005 (2013.01); H01L 2224/1146 (2013.01); H01L 2224/16104 (2013.01); H01L 2224/16221 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/16501 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/49171 (2013.01); H01L 2224/73265 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06568 (2013.01); H01L 2225/06582 (2013.01); H01L 2924/15174 (2013.01); H01L 2924/181 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a semiconductor element having an upper surface and a lower surface opposite to the upper surface;
an electrode pad formed proximate to the lower surface of the semiconductor element;
a conductive projection member connected to the electrode pad;
a first terminal having an upper surface, a lower surface and a side surface, the upper surface being connected to the conductive projection member electrically;
a fixing member formed on the upper surface of the first terminal; and
a resin package that covers the semiconductor element, the fixing member, and a part of the first terminal, an entirety of the semiconductor element being embedded within the resin package,
wherein the lower surface and the side surface of the first terminal are exposed from the resin package, and the fixing member is formed in proximity to both sides of the conductive projection member in a cross section in a manner such that the fixing member spreads widest at the upper surface of the first terminal and becomes narrower as the fixing member becomes closer to the semiconductor element in the cross section.