US 12,283,559 B2
Copper wire bond on gold bump on semiconductor die bond pad
Lin Zhang, Chengdu (CN); Huo Yun Duan, Chengdu (CN); Xi Lin Li, Chengdu (CN); Chen Xiong, Chengdu (CN); and Xiao Lin Kang, Chengdu (CN)
Assigned to TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US)
Filed by TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US)
Filed on Nov. 29, 2022, as Appl. No. 18/071,288.
Application 18/071,288 is a division of application No. 16/941,701, filed on Jul. 29, 2020, granted, now 11,515,275.
Claims priority of application No. PCT/CN2020/074433 (WO), filed on Apr. 6, 2020.
Prior Publication US 2023/0086535 A1, Mar. 23, 2023
Int. Cl. H01L 23/498 (2006.01); H01L 23/00 (2006.01)
CPC H01L 24/14 (2013.01) [H01L 23/49816 (2013.01); H01L 23/49861 (2013.01); H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 24/43 (2013.01); H01L 24/46 (2013.01); H01L 24/73 (2013.01); H01L 24/81 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/141 (2013.01); H01L 2224/14505 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/73207 (2013.01); H01L 2224/81205 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01079 (2013.01)] 24 Claims
OG exemplary drawing
 
1. A semiconductor package comprising:
a conductive pad;
a semiconductor die with an aluminum bond pad over a dielectric layer of the semiconductor die;
a gold bump on the aluminum bond pad;
a first intermetallic layer of gold and aluminum between the aluminum bond pad and the gold bump;
a copper ball bond on the gold bump;
a second intermetallic layer of copper and gold between the copper ball bond and the gold bump;
a copper wire extending from the copper ball bond to the conductive pad; and
a stitch bond between the copper wire and the conductive pad.