US 12,283,544 B2
Semiconductor storage device
Kiichi Tachi, Yokkaichi Mie (JP)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by KIOXIA CORPORATION, Tokyo (JP)
Filed on Aug. 16, 2021, as Appl. No. 17/403,678.
Claims priority of application No. 2021-024339 (JP), filed on Feb. 18, 2021.
Prior Publication US 2022/0262720 A1, Aug. 18, 2022
Int. Cl. H01L 23/528 (2006.01); H10B 43/27 (2023.01)
CPC H01L 23/528 (2013.01) [H10B 43/27 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A semiconductor storage device, comprising:
a first stacked region including a plurality of word lines stacked in a first direction;
a first plurality of memory pillars extending through the first stacked region in the first direction;
a second stacked region including the plurality of word lines and aligned with the first stacked region along a second direction intersecting the first direction;
a second plurality of memory pillars extending through the second stacked region in the first direction; and
a third stacked region including the plurality of word lines, the third stacked region being between the first stacked region and the second stacked region in the second direction, wherein
the third stacked region includes a first stacked subregion and a second stacked subregion above the first stacked subregion in first direction,
the first stacked subregion includes:
a first stair portion that is formed with a first part of the plurality of word lines and is adjacent to the second stacked region in the second direction; and
a first bridge portion adjacent to the first stair portion in a third direction intersecting the first direction and the second direction, the first stair portion ascending toward the first stacked region,
the second stacked subregion includes:
a first contact pass-through portion through which a plurality of first contacts extending from the first part of the plurality of word lines in the first stair portion passes;
a trapezoidal portion that is formed with a second part of the plurality of word lines above the first part in the first direction, between the first contact pass-through portion and the first stacked region in the second direction, the trapezoidal portion comprising a slope portion formed on a first side of the trapezoidal portion in the second direction and facing the second stacked region and a second stair portion formed on a second side of the trapezoidal portion opposite to the first side in the second direction and facing the first stacked region, the slope portion being steeper than the second stair portion;
a second bridge portion adjacent to the second stair portion in the third direction, the second stair portion ascending toward the second stacked region; and
a second contact pass-through portion through which a plurality of second contracts extending from the second part of the plurality of word lines in the second stair portion passes,
one of the plurality of word lines in the second stair portion is connected to one of the plurality of word lines in the first stacked region through one of the plurality of word lines in the second bridge portion, and
no memory pillar is provided between the first stacked subregion and the second stacked subregion in the second direction.