US 12,283,534 B2
Power semiconductor devices with improved overcoat adhesion and/or protection
In Hwan Ji, Durham, NC (US); Jae-Hyung Park, Apex, NC (US); and Philipp Steinmann, Durham, NC (US)
Assigned to Wolfspeed, Inc., Durham, NC (US)
Filed by Wolfspeed, Inc., Durham, NC (US)
Filed on Nov. 4, 2020, as Appl. No. 17/088,647.
Prior Publication US 2022/0139793 A1, May 5, 2022
Int. Cl. H01L 23/31 (2006.01); H01L 23/00 (2006.01)
CPC H01L 23/3142 (2013.01) [H01L 23/562 (2013.01)] 32 Claims
OG exemplary drawing
 
1. A power semiconductor device, comprising:
a semiconductor layer structure; and
a protective overcoating on a bonding surface of the semiconductor layer structure,
wherein the bonding surface comprises a plurality of adhesion features that are non-uniformly arranged along a continuous interface with the protective overcoating, and wherein at least a portion of the bonding surface laterally extends beyond the protective overcoating.