US 12,283,523 B2
Semiconductor device and fabrication method thereof
Tiantian Zhang, Shanghai (CN); and Xuezhen Jing, Shanghai (CN)
Assigned to Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai (CN); and Semiconductor Manufacturing International (Beijing) Corporation, Beijing (CN)
Filed by Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai (CN); and Semiconductor Manufacturing International (Beijing) Corporation, Beijing (CN)
Filed on Sep. 1, 2021, as Appl. No. 17/446,695.
Claims priority of application No. 202010942616.6 (CN), filed on Sep. 9, 2020.
Prior Publication US 2022/0076997 A1, Mar. 10, 2022
Int. Cl. H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01)
CPC H01L 21/76858 (2013.01) [H01L 21/76802 (2013.01); H01L 21/76843 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H01L 23/53209 (2013.01); H01L 23/53238 (2013.01); H01L 23/53252 (2013.01); H01L 23/53266 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
a source-drain plug layer in the substrate;
a gate structure in the substrate;
a dielectric layer, disposed over the substrate and covering the gate structure and the source-drain plug layer, wherein the dielectric layer contains a first through-hole having a bottom exposing a top surface of the source-drain plug layer, and a second through-hole having a bottom exposing a top surface of the gate structure; and
an interface layer, disposed on each of the top surface of the source-drain plug layer exposed by the first through-hole and the top surface of the gate structure exposed by the second through-hole, the interface layer being made of a material including a titanium-molybdenum alloy or a tantalum-molybdenum alloy, and a width of the interface layer in a horizontal direction being greater than a width of the source-drain plug layer in the horizontal direction;
an interconnection layer disposed on a top surface of the interface layer and fully filing each of the first through-hole and the second through-hole;
an adhesion layer formed on a top surface of the dielectric layer, a top surface of the adhesion layer being lower than top surfaces of the interconnection layer; and
a metal layer formed on the top surface of the adhesion layer and the top surfaces of the interconnection layer, a top surface of the metal layer being higher than the top surfaces of the interconnection layer, and a material of the adhesion layer being different from a material of the metal layer.