US 12,283,514 B2
Method and system for processing wafer
Sheng-Chun Yang, Tainan (TW); Chih-Lung Cheng, Miaoli County (TW); Yi-Ming Lin, Tainan (TW); Po-Chih Huang, Tainan (TW); Yu-Hsiang Juan, Taichung (TW); Xuan-Yang Zheng, Tainan (TW); Ren-Jyue Wang, Hsinchu (TW); and Chih-Yuan Wang, Tainan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Aug. 30, 2021, as Appl. No. 17/461,002.
Prior Publication US 2023/0069237 A1, Mar. 2, 2023
Int. Cl. H01L 21/687 (2006.01); H01L 21/67 (2006.01); H01L 21/683 (2006.01)
CPC H01L 21/687 (2013.01) [H01L 21/67253 (2013.01); H01L 21/6838 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for processing wafer, comprising:
extracting a first gas from a chamber via a first route;
blocking a second route used to be pumped down to chuck a wafer placed in the chamber, wherein the second route connects the chamber and the first route, and the wafer is positioned adjacent to a first end of the second route; and
providing a second gas via a third route to purge a junction of the first route and a second end of the second route when the second route is blocked, wherein the second end is opposite the first end, and a junction of the third route and the second route is adjacent to the second end of the second route.