US 12,283,487 B2
Method for manufacturing structure
Fumimasa Horikiri, Hitachi (JP); and Noboru Fukuhara, Hitachi (JP)
Assigned to SUMITOMO CHEMICAL COMPANY, LIMITED, Tokyo (JP)
Appl. No. 17/629,157
Filed by SUMITOMO CHEMICAL COMPANY, LIMITED, Tokyo (JP)
PCT Filed Jul. 6, 2020, PCT No. PCT/JP2020/026455
§ 371(c)(1), (2) Date Jan. 21, 2022,
PCT Pub. No. WO2021/020041, PCT Pub. Date Feb. 4, 2021.
Claims priority of application No. 2019-140028 (JP), filed on Jul. 30, 2019.
Prior Publication US 2022/0270887 A1, Aug. 25, 2022
Int. Cl. H01L 21/3063 (2006.01); H01L 21/306 (2006.01)
CPC H01L 21/30635 (2013.01) [H01L 21/30612 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A method for manufacturing a structure, comprising:
applying a first etching to a surface of a member, at least the surface being composed of Group III nitride; and
applying a second etching to the surface to which the first etching has been applied,
wherein in applying the first etching, a flat portion and a protruding portion are formed, the flat portion being newly appeared on the surface by etching, and the protruding portion being raised with respect to the flat portion, which is caused by being less likely to be etched than the flat portion, and
in applying the second etching, the protruding portion is lowered by etching the protruding portion, and
wherein the first etching is photoelectrochemical etching, the second etching is not photoelectrochemical etching, and the surface is not irradiated with ultraviolet light in the second etching.