US 12,283,483 B2
Sag nanowire growth with a planarization process
Geoffrey C. Gardner, West Lafayette, IN (US); Sergei V. Gronin, West Lafayette, IN (US); Raymond L. Kallaher, West Lafayette, IN (US); and Michael James Manfra, West Lafayette, IN (US)
Assigned to Microsoft Technology Licensing, LLC, Redmond, WA (US)
Filed by Microsoft Technology Licensing, LLC, Redmond, WA (US)
Filed on Jan. 30, 2024, as Appl. No. 18/426,794.
Application 18/426,794 is a division of application No. 16/887,480, filed on May 29, 2020, granted, now 11,929,253.
Prior Publication US 2024/0170286 A1, May 23, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/00 (2006.01); H01L 21/02 (2006.01); H01L 21/321 (2006.01)
CPC H01L 21/02603 (2013.01) [H01L 21/02304 (2013.01); H01L 21/3212 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A method for manufacturing a nanowire structure comprising:
providing a substrate;
forming a buffer region over the substrate;
eliminating a sacrificial top portion of the buffer region to provide a buffer layer with a planarized top surface, wherein:
the planarized top surface has a surface roughness below 10 Å; and
the buffer layer comprises a plurality of discrete layers;
forming a patterned mask over the planarized top surface of the buffer layer, wherein the patterned mask comprises an opening through which a portion of the planarized top surface of the buffer layer is exposed; and
forming a nanowire after the patterned mask is formed, wherein the nanowire is formed over the exposed portion of the planarized top surface of the buffer layer through the opening of the patterned mask, and the nanowire protrudes vertically beyond a top surface of the patterned mask, wherein:
the substrate comprises gallium antimonide (GaSb);
within the buffer layer, at least one of the plurality of discrete layers comprises aluminum gallium arsenide antimonide (AlGaAsSb); and
the nanowire is formed of indium arsenide (InAs), wherein the buffer layer is configured to provide electrical confinement and isolation between the substrate and the nanowire.