US 12,283,479 B2
Substrate processing method
JaeOk Ko, Seoul (KR); HeeSung Kang, Anyang-si (KR); JaeBin Ahn, Suwon-si (KR); SeokJae Oh, Suwon-si (KR); WanGyu Lim, Hwaseong-si (KR); HyounMo Choi, Hwaseong-si (KR); YoungJae Kim, Cheonan-si (KR); and Shinya Ueda, Hwaseong-si (KR)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP Holding B.V., Almere (NL)
Filed on Jun. 23, 2022, as Appl. No. 17/847,531.
Claims priority of provisional application 63/215,965, filed on Jun. 28, 2021.
Prior Publication US 2022/0415650 A1, Dec. 29, 2022
Int. Cl. H01L 21/02 (2006.01); C23C 16/02 (2006.01); C23C 16/04 (2006.01); C23C 16/34 (2006.01); C23C 16/455 (2006.01); C23C 16/505 (2006.01); H01J 37/32 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01)
CPC H01L 21/02274 (2013.01) [C23C 16/0236 (2013.01); C23C 16/045 (2013.01); C23C 16/345 (2013.01); C23C 16/45534 (2013.01); C23C 16/45536 (2013.01); C23C 16/4554 (2013.01); C23C 16/45553 (2013.01); C23C 16/505 (2013.01); H01J 37/3244 (2013.01); H01L 21/0217 (2013.01); H01L 21/02211 (2013.01); H01L 21/0228 (2013.01); H01L 21/31116 (2013.01); H01L 21/76877 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A substrate processing method comprising:
a first step of forming a thin film on a structure including a gap by performing a first cycle including supplying a first reaction gas and supplying a second reaction gas on the structure a plurality of times;
a second step of etching a portion of the thin film by supplying a fluorine-containing gas onto the thin film;
a third step of supplying a hydrogen-containing gas onto the thin film;
a fourth step of supplying an inhibiting gas to an upper portion of the gap; and
a fifth step of forming a thin film by performing a second cycle including supplying the first reaction gas and supplying the second reaction gas on the thin film a plurality of times,
wherein a supply time of the inhibiting gas is less than a supply time of the first reaction gas, the second reaction gas, the fluorine-containing gas, and the hydrogen-containing gas.