US 12,283,478 B2
Processing method, method of manufacturing semiconductor device, processing apparatus, and recording medium
Yoshitomo Hashimoto, Toyama (JP); Kimihiko Nakatani, Toyama (JP); and Takayuki Waseda, Toyama (JP)
Assigned to Kokusai Electric Corporation, Tokyo (JP)
Filed by Kokusai Electric Corporation, Tokyo (JP)
Filed on Jan. 25, 2024, as Appl. No. 18/422,641.
Application 18/422,641 is a continuation of application No. 18/081,277, filed on Dec. 14, 2022, granted, now 11,935,742.
Application 18/081,277 is a continuation of application No. 17/697,533, filed on Mar. 17, 2022, granted, now 11,626,280, issued on Apr. 11, 2023.
Claims priority of application No. 2021-070590 (JP), filed on Apr. 19, 2021.
Prior Publication US 2024/0170280 A1, May 23, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/02 (2006.01); C23C 16/46 (2006.01)
CPC H01L 21/02211 (2013.01) [C23C 16/46 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A processing method comprising:
(a) forming an inhibitor layer on a surface of a first material of a concave portion provided on a surface of a substrate, by supplying a precursor to the substrate to adsorb at least a portion of a molecular structure of molecules constituting the precursor on the surface of the first material of the concave portion, the concave portion being composed of the first material containing a first element and a second material containing a second element different from the first element;
(b) growing a film on a surface of the second material of the concave portion by supplying a film-forming material to the substrate having the inhibitor layer formed on the surface of the first material; and
(c) forming a hydroxyl group termination on the surface of the first material before performing (a).