US 12,283,477 B2
Method of manufacturing a semiconductor device
Shih-Wei Peng, Hsinchu (TW); Chia-Tien Wu, Taichung (TW); and Jiann-Tyng Tzeng, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Jun. 8, 2023, as Appl. No. 18/331,924.
Application 17/581,791 is a division of application No. 16/786,418, filed on Feb. 10, 2020, granted, now 11,257,670, issued on Feb. 22, 2022.
Application 18/331,924 is a continuation of application No. 17/581,791, filed on Jan. 21, 2022, granted, now 11,715,636.
Prior Publication US 2023/0326741 A1, Oct. 12, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/02 (2006.01); H01L 21/033 (2006.01); H01L 23/58 (2006.01)
CPC H01L 21/02172 (2013.01) [H01L 21/0337 (2013.01); H01L 23/585 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, the method comprising:
providing a substrate including a first cell and a second cell;
forming a plurality of first metal strips on a first plane;
forming a first trench over a boundary between the first cell and the second cell, wherein a bottom surface of the first trench is located on a second plane over the first plane;
filling the first trench with a non-conductive material, resulting in a separating wall; and
forming a plurality of second metal strips on a third plane over the second plane, wherein the plurality of second metal strips comprise a first second metal strip and a second second metal strip separated from each other by the separating wall.