US 12,283,476 B2
Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium
Hiroshi Ashihara, Toyama (JP); Motomu Degai, Toyama (JP); and Takayuki Waseda, Toyama (JP)
Assigned to Kokusai Electric Corporation, Tokyo (JP)
Filed by Kokusai Electric Corporation, Tokyo (JP)
Filed on Jan. 19, 2021, as Appl. No. 17/152,327.
Application 17/152,327 is a continuation of application No. PCT/JP2018/026673, filed on Jul. 17, 2018.
Prior Publication US 2021/0143001 A1, May 13, 2021
Int. Cl. H01L 21/02 (2006.01); C23C 16/34 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01); C23C 16/56 (2006.01); H01L 21/311 (2006.01)
CPC H01L 21/0217 (2013.01) [C23C 16/345 (2013.01); C23C 16/455 (2013.01); C23C 16/52 (2013.01); C23C 16/56 (2013.01); H01L 21/0206 (2013.01); H01L 21/02164 (2013.01); H01L 21/02236 (2013.01); H01L 21/31111 (2013.01)] 22 Claims
OG exemplary drawing
 
1. A substrate processing method, comprising:
(a) providing a substrate where a natural oxide film is removed from a surface thereof by supplying a first inorganic material to the substrate wherein at least a first film containing silicon and a second film different from the first film are exposed on the surface of the substrate;
(b) forming an oxide film on a surface of the first film by supplying an oxidizing agent to the substrate;
(c) modifying the oxide film formed on the surface of the first film by supplying a second inorganic material to the substrate; and
(d) after sequentially performing (a), (b) and (c), selectively growing a film on a surface of the second film by supplying a deposition gas to the substrate.
 
20. A substrate processing apparatus comprising:
a first gas supply system configured to supply a first inorganic material to a substrate wherein at least a first film containing silicon and a second film different from the first film are exposed on a surface of the substrate;
a second gas supply system configured to supply an oxidizing agent to the substrate;
a third gas supply system configured to supply a second inorganic material to the substrate;
a fourth gas supply system configured to supply a deposition gas to the substrate; and
a controller capable of controlling the first gas supply system, the second gas supply system, the third gas supply system and the fourth gas supply system to perform:
(a) providing a substrate where a natural oxide film is removed from the surface thereof by supplying the first inorganic material to the substrate;
(b) forming an oxide film on a surface of the first film by supplying the oxidizing agent to the substrate;
(c) modifying the oxide film formed on the surface of the first film by supplying the second inorganic material to the substrate; and
(d) after sequentially performing (a), (b) and (c), selectively growing a film on a surface of the second film by supplying the deposition gas to the substrate.
 
22. A method of manufacturing a semiconductor device, comprising the method of claim 1.