| CPC G11C 7/04 (2013.01) [G06F 1/206 (2013.01); G11C 7/22 (2013.01)] | 20 Claims |

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1. A system for controlling temperatures in a memory, the system comprising:
a high bandwidth memory (HBM) including core dies, the HBM being arranged into portions, each of the portions including memory cells, the HBM further including:
a first sensing unit configured to generate one or more first environmental signals corresponding to at least a first transistor in a corresponding at least a first one of the memory cells in a first one of the portions; and
a second sensing unit configured to generate one or more second environmental signals corresponding to at least a second transistor in a corresponding at least a second one of the memory cells in a second one of the portions; and
a differentiated dynamic voltage and frequency scaling (DDVFS) device configured to perform the following:
for a first set of one or more of the memory cells in the first portion which includes the first memory cell, controlling a temperature of the first set based on the one or more first environmental signals; and
for a second set of one or more of the memory cells in the second portion which includes the second memory cell, controlling a temperature of the second set based on the one or more second environmental signals.
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