US 12,283,328 B2
Storage system and method for inference of read thresholds based on memory parameters and conditions
Eran Sharon, Rishon Lezion (IL); Ariel Navon, Revava (IL); Alexander Bazarsky, Holon (IL); David Avraham, San Jose, CA (US); Nika Yanuka, Hadera (IL); Idan Alrod, Herzeliya (IL); Tsiko Shohat Rozenfeld, Los Altos, CA (US); and Ran Zamir, Ramat Gan (IL)
Assigned to Sandisk Technologies, Inc., Milpitas, CA (US)
Filed by Western Digital Technologies, Inc., San Jose, CA (US)
Filed on Jun. 13, 2022, as Appl. No. 17/838,481.
Prior Publication US 2023/0402112 A1, Dec. 14, 2023
Int. Cl. G11C 11/00 (2006.01); G11C 11/16 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01); G11C 16/14 (2006.01); G11C 16/26 (2006.01); G11C 16/34 (2006.01); G11C 29/52 (2006.01); G11C 16/04 (2006.01)
CPC G11C 16/3459 (2013.01) [G11C 11/1673 (2013.01); G11C 16/08 (2013.01); G11C 16/102 (2013.01); G11C 16/14 (2013.01); G11C 16/26 (2013.01); G11C 16/3495 (2013.01); G11C 29/52 (2013.01); G11C 16/0483 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A storage system comprising:
a memory; and
a processor coupled with the memory and configured to:
train a machine-learning model of an inference engine using state-by-state cell-voltage-distribution measurements obtained at different conditions of the memory, wherein the trained machine-learning model non-linearly couples a plurality of parameters of the memory with a respective plurality of read thresholds;
use the inference engine to infer a read threshold based on current parameters of the memory; and
use the inferred read threshold in reading a wordline in the memory.